2N3055(NPN), MJ2955(PNP) Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features

The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an …

2N3055 is a bipolar junction transistor (BJT) that is widely used as a power transistor in various electronic circuits. It is an NPN (negative-positive-negative) transistor with a maximum collector …

Jan 19, 2025 · The 2N3055 is a power bipolar transistor designed to handle high power loads in the range of 100 V, and 15 amps. In this post I will comprehensively discuss the pinout function, …

View 2N3055 datasheet for technical specifications, dimensions and more at DigiKey.

The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity …

The 2N3055 is a classic NPN power bipolar junction transistor widely used in linear and switching applications. Built in a TO3 metal package, it offers high durability and effective heat dissipation, …

The devices are manufactured in planar technology with “base island” layout and are suitable for audio, power linear and switching applications.

Preferred devices are recommended choices for future use and best overall value. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Figure 2. Active Region Safe Operating Area. There are two …

The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.